Structures and textures of transparent conducting pulsed laser deposited In2O3-ZnO thin films revealed by transmission electron microscopy
Identifieur interne : 010899 ( Main/Repository ); précédent : 010898; suivant : 010900Structures and textures of transparent conducting pulsed laser deposited In2O3-ZnO thin films revealed by transmission electron microscopy
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Abstract
Thin films of composition belonging to the In2O3-ZnO binary system were made by pulsed laser deposition, and characterized by means of X-ray and transmission electron microscopy (TEM) measurements to obtain phase purity and textural/microstructural information. Collected TEM images together with their analysis clearly show that three different types of films could be obtained, depending on the In2O3-ZnO target composition and film growth parameters. The first type, obtained from indium-rich pellets, is made of polyhedral grains having a bixbyite-type structure. The second type, obtained from zinc-rich pellets, presents a classic columnar texture consisting of grains having a wurtzite-type structure, occasionally faulted. The last type of thin films is made of a multitude of ZnkIn2Ok+3 polytypes forming a fibrous texture. The overall EDS analysis evidences that the composition is nearly constant between the target and the film, except for the Zn amount that is always slightly lower in the films. High-resolution electron microscopy studies on films formed of polytypes enable, after a complete image analysis, a simulation of the X-ray diffraction patterns that fit well with the experimental patterns, justifying the validity of our random intergrowth model.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structures and textures of transparent conducting pulsed laser deposited In<sub>2</sub>O<sub>3</sub>-ZnO thin films revealed by transmission electron microscopy</title><author><name sortKey="Dupont, L" uniqKey="Dupont L">L. Dupont</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, UMR 6007, 33 rue Saint Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Maugy, C" uniqKey="Maugy C">C. Maugy</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, UMR 6007, 33 rue Saint Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Naghavi, N" uniqKey="Naghavi N">N. Naghavi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, UMR 6007, 33 rue Saint Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Guery, C" uniqKey="Guery C">C. Guery</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, UMR 6007, 33 rue Saint Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Tarascon, J M" uniqKey="Tarascon J">J.-M. Tarascon</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, UMR 6007, 33 rue Saint Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0322924</idno><date when="2001">2001</date><idno type="stanalyst">PASCAL 01-0322924 INIST</idno><idno type="RBID">Pascal:01-0322924</idno><idno type="wicri:Area/Main/Corpus">010D35</idno><idno type="wicri:Area/Main/Repository">010899</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-4596</idno><title level="j" type="abbreviated">J. solid state chem.</title><title level="j" type="main">Journal of solid state chemistry</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from vapors</term><term>Crystal structure</term><term>Experimental study</term><term>High-resolution methods</term><term>Indium oxides</term><term>Laser ablation technique</term><term>Microstructure</term><term>Pulsed lasers</term><term>TEM</term><term>Texture</term><term>Thin films</term><term>XRD</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche mince</term><term>Croissance cristalline en phase vapeur</term><term>Méthode ablation laser</term><term>Laser pulsé</term><term>Structure cristalline</term><term>Texture</term><term>Diffraction RX</term><term>TEM</term><term>Microstructure</term><term>Haute résolution</term><term>Indium oxyde</term><term>Zinc oxyde</term><term>6855J</term><term>8115F</term><term>Système In2O3 ZnO</term><term>In O Zn</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Thin films of composition belonging to the In<sub>2</sub>O<sub>3</sub>-ZnO binary system were made by pulsed laser deposition, and characterized by means of X-ray and transmission electron microscopy (TEM) measurements to obtain phase purity and textural/microstructural information. Collected TEM images together with their analysis clearly show that three different types of films could be obtained, depending on the In<sub>2</sub>O<sub>3</sub>-ZnO target composition and film growth parameters. The first type, obtained from indium-rich pellets, is made of polyhedral grains having a bixbyite-type structure. The second type, obtained from zinc-rich pellets, presents a classic columnar texture consisting of grains having a wurtzite-type structure, occasionally faulted. The last type of thin films is made of a multitude of Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> polytypes forming a fibrous texture. The overall EDS analysis evidences that the composition is nearly constant between the target and the film, except for the Zn amount that is always slightly lower in the films. High-resolution electron microscopy studies on films formed of polytypes enable, after a complete image analysis, a simulation of the X-ray diffraction patterns that fit well with the experimental patterns, justifying the validity of our random intergrowth model.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-4596</s0></fA01><fA02 i1="01"><s0>JSSCBI</s0></fA02><fA03 i2="1"><s0>J. solid state chem.</s0></fA03><fA05><s2>158</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structures and textures of transparent conducting pulsed laser deposited In<sub>2</sub>O<sub>3</sub>-ZnO thin films revealed by transmission electron microscopy</s1></fA08><fA11 i1="01" i2="1"><s1>DUPONT (L.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAUGY (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>NAGHAVI (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>GUERY (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>TARASCON (J.-M.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, UMR 6007, 33 rue Saint Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>119-133</s1></fA20><fA21><s1>2001</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14677</s2><s5>354000098957400010</s5></fA43><fA44><s0>0000</s0><s1>© 2001 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0322924</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of solid state chemistry</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Thin films of composition belonging to the In<sub>2</sub>O<sub>3</sub>-ZnO binary system were made by pulsed laser deposition, and characterized by means of X-ray and transmission electron microscopy (TEM) measurements to obtain phase purity and textural/microstructural information. Collected TEM images together with their analysis clearly show that three different types of films could be obtained, depending on the In<sub>2</sub>O<sub>3</sub>-ZnO target composition and film growth parameters. The first type, obtained from indium-rich pellets, is made of polyhedral grains having a bixbyite-type structure. The second type, obtained from zinc-rich pellets, presents a classic columnar texture consisting of grains having a wurtzite-type structure, occasionally faulted. The last type of thin films is made of a multitude of Zn<sub>k</sub>In<sub>2</sub>O<sub>k+3</sub> polytypes forming a fibrous texture. The overall EDS analysis evidences that the composition is nearly constant between the target and the film, except for the Zn amount that is always slightly lower in the films. High-resolution electron microscopy studies on films formed of polytypes enable, after a complete image analysis, a simulation of the X-ray diffraction patterns that fit well with the experimental patterns, justifying the validity of our random intergrowth model.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Crystal growth from vapors</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Méthode ablation laser</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Laser ablation technique</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser pulsé</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Pulsed lasers</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Crystal structure</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Texture</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Texture</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>XRD</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>TEM</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>TEM</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Microstructure</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Microstructure</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Haute résolution</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>High-resolution methods</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>14</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>8115F</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Système In2O3 ZnO</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>In O Zn</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>12</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>12</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Oxyde</s0><s5>13</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Oxides</s0><s5>13</s5></fC07><fC07 i1="03" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>16</s5></fC07><fC07 i1="03" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>16</s5></fC07><fN21><s1>225</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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